cystech electronics corp. spec. no. : c849l3 issued date : 2012.08.28 revised date : page no. : 1/7 BTB1238AL3 cystek product specification silicon pnp epitaxial planar transistor bv ceo -240v BTB1238AL3 i c -1a v cesat(max) -0.3v description ? high bv ceo ? high current capability ? rohs compliant package ? pb-free lead plating and halogen-free package symbol outline absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol limits unit collector-base voltage v cbo -240 v collector-emitter voltage v ceo -240 v emitter-base voltage v ebo -7 v collector current (dc) i c -1 a collector current (pulse) i cp -2 a base current i b -200 ma power dissipation p d 3 (note ) w thermal resistance, junction to ambient r ja 41.7 c/w operating junction and storage temperat ure range tj ; tstg -55 ~ +150 c note: the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 square inch minimum. BTB1238AL3 sot-223 b c e c b base c collector e emitter
cystech electronics corp. spec. no. : c849l3 issued date : 2012.08.28 revised date : page no. : 2/7 BTB1238AL3 cystek product specification characteristics (ta=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions bv cbo -240 - - v i c =-50 a, i e =0 bv ceo -240 - - v i c =-1ma, i b =0 bv ebo -7 - - v i e =-50 a, i c =0 i cbo - - -100 na v cb =-240v, i e =0 i ebo - - -100 na v eb =-7v, i c =0 *v ce(sat) - - -0.3 v i c =-500ma, i b =-50ma *v ce(sat) - - -3 v i c =-1a, i b =-100ma *v be(sat) - - -1.1 v i c =-1a, i b =-100ma *v be(on) - - -0.9 v v ce =-5v, i c =-150ma h fe 1 120 - 400 - v ce =-5v, i c =-100ma h fe 2 60 - - - v ce =-5v, i c =-500ma f t - 140 - mhz v ce =-5v, i c =-150ma cob - 27 - pf v cb =-10v, i e =0, f=1mhz *pulse test: pulse width 380s, duty cycle 2% ordering information device package shipping BTB1238AL3-0-t3-g sot-223 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel recommended soldering footprint
cystech electronics corp. spec. no. : c849l3 issued date : 2012.08.28 revised date : page no. : 3/7 BTB1238AL3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=75c ta=25c 125c vce=2v current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=75c ta=25c 125c vce=5v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=50ib 125c 75c 25c saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=100ib 125c 75c 25c saturation voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=50ib 125c 75c 25c on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=5v 125c 75c 25c
cystech electronics corp. spec. no. : c849l3 issued date : 2012.08.28 revised date : page no. : 4/7 BTB1238AL3 cystek product specification typical characteristics(cont.) power derating curve 0 0.5 1 1.5 2 2.5 3 3.5 0 50 100 150 200 t a , ambient temperature() p d , power dissipation(w)
cystech electronics corp. spec. no. : c849l3 issued date : 2012.08.28 revised date : page no. : 5/7 BTB1238AL3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c849l3 issued date : 2012.08.28 revised date : page no. : 6/7 BTB1238AL3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c849l3 issued date : 2012.08.28 revised date : page no. : 7/7 BTB1238AL3 cystek product specification sot-223 dimension *: typical 321 f b a c d e g h a1 a2 i inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1142 0.1220 2.90 3.10 g 0.0551 0.0709 1.40 1.80 b 0.2638 0.2874 6.70 7.30 h 0.0098 0.0138 0.25 0.35 c 0.1299 0.1457 3.30 3.70 i 0.0008 0.0039 0.02 0.10 d 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - e *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o f 0.2480 0.2638 6.30 6.70 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . g1 marking: date code: device name b1238a style: pin 1.base 2.collector 3.emitter 3-lead sot-223 plastic surface mounted package cystek package code: l3
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